aptgf75h120tg aptgf75h120tg ? rev 3 february, 2010 www.microsemi.com 1-5 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 100 i c continuous collector current t c = 80c 75 i cm pulsed collector current t c = 25c 150 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 500 w rbsoa reverse bias safe operating area t j = 150c 150a @ 1200v these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com vbus out1 out2 q3 q4 e3 g3 0/vbu s e4 g4 nt c2 g2 e2 nt c1 q2 q1 g1 e1 out1 out2 ntc1 ntc2 g3 e3 vbus g1 e1 g4 g2 e2 0/vbus e4 v ces = 1200v i c = 75a @ tc = 80c application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? non punch through (npt) fast igbt - low voltage drop - low tail current - switching frequency up to 50 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design - lead frames for power connections ? internal thermistor for temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? easy paralleling due to positive t c of v cesat ? low profile ? rohs compliant full - bridge n pt igbt power module
aptgf75h120tg aptgf75h120tg ? rev 3 february, 2010 www.microsemi.com 2-5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 250 i ces zero gate voltage collector current v ge = 0v v ce = 1200v t j = 125c 500 a t j = 25c 3.2 3.7 v ce(sat) collector emitter saturation voltage v ge =15v i c = 75a t j = 125c 3.9 v v ge(th) gate threshold voltage v ge = v ce , i c = 2.5 ma 4.5 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 500 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 5.1 c oes output capacitance 0.7 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 0.4 nf q g gate charge v ge =15v, i c =75a v ce =600v 0.8 c t d(on) turn-on delay time 120 t r rise time 50 t d(off) turn-off delay time 310 t f fall time inductive switching (25c) v ge = 15v v bus = 600v i c = 75a r g = 7.5 20 ns t d(on) turn-on delay time 130 t r rise time 60 t d(off) turn-off delay time 360 t f fall time inductive switching (125c) v ge = 15v v bus = 600v i c = 75a r g = 7.5 30 ns e on turn-on switching energy t j = 125c 9 e off turn-off switching energy v ge = 15v v bus = 600v i c = 75a r g = 7.5 t j = 125c 4 mj i sc short circuit data v ge 15v ; v bus = 900v t p 10s ; t j = 125c 450 a reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 250 i rm maximum reverse leakage current v r =1200v t j = 125c 500 a i f dc forward current tc = 80c 50 a t j = 25c 2.1 v f diode forward voltage i f = 50a t j = 125c 1.9 v t j = 25c 95 t rr reverse recovery time t j = 125c 190 ns t j = 25c 4.2 q rr reverse recovery charge t j = 125c 9 c t j = 25c 1.5 e r reverse recovery energy i f = 50a v r = 600v di/dt =1500a/s t j = 125c 3 mj
aptgf75h120tg aptgf75h120tg ? rev 3 february, 2010 www.microsemi.com 3-5 temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 thermal and package characteristics symbol characteristic min typ max unit igbt 0.25 r thjc junction to case thermal resistance diode 0.6 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m5 2.5 4.7 n.m wt package weight 160 g sp4 package outline (dimensions in mm) all dimensions marked " * " are tolerenced as : see application note apt0501 - mounting instructions for sp4 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t
aptgf75h120tg aptgf75h120tg ? rev 3 february, 2010 www.microsemi.com 4-5 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 25 50 75 100 125 150 0123456 v ce (v) i c (a) output characteristics v ge =15v v ge =12v v ge =20v v ge =9v 0 25 50 75 100 125 150 0123456 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c 0 25 50 75 100 125 150 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff er 0 4 8 12 16 20 24 28 0 25 50 75 100 125 150 i c (a) e (mj) v ce = 600v v ge = 15v r g = 7.5 ? t j = 125c eon eoff 0 5 10 15 20 25 30 35 0 10203040506070 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 75a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 25 50 75 100 125 150 175 0 300 600 900 1200 1500 v ce (v) i c (a) v ge =15v t j =125c r g =7.5 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
aptgf75h120tg aptgf75h120tg ? rev 3 february, 2010 www.microsemi.com 5-5 forward characteristic of diode t j =25c t j =125c 0 25 50 75 100 125 00.511.522.53 v f (v) i c (a) hard switching zcs zvs 0 10 20 30 40 50 60 70 80 90 100 0 20406080100 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =7.5 ? t j =125c t c =75c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode microsemi reserves the right to change, without notice, the specifications and info rmation contained herein
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